IRG4BC30KD Datasheet, PDF (7/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

160
V_R = 2 0 0 V
T_J = 125°C
T_J = 25°C
120
I_F = 24A
I_F = 12A
80
I_F = 6.0A
40
IRG4BC30KD
100
V_R = 2 0 0 V
T_J = 125°C
T_J = 25°C
I_F = 24A
10
I _F = 12A
I_F = 6.0A
0
100
1000
dif /dt - (A/µs)
Fig. 14 - Typical Reverse Recovery vs. di_f/dt
600
V_R = 2 0 0 V
T_J = 125°C
T_J = 25°C
1
100
1000
di _f /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. di_f/dt
10000
V_R = 2 0 0 V
T_J = 125°C
T_J = 25°C
400
1000
I_F = 6.0A
I_F = 24A
200
I_F = 12A
I_F = 6.0A
I_F = 12A
100
I_F = 24A
0
100
1000
di_f /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. di_f/dt
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10
100
1000
d i _f /d t - (A/µ s)
Fig. 17 - Typical di_(rec)M/dt vs. di_f/dt
7