IRG4BC30KD Datasheet, PDF (6/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

IRG4BC30KD
 5.0 RG = 2O3hΩm
T _J = 150° C
V_CC = 480V
4.0 ^VGE ^{= 15V}
 100
V_GE = 20V
T _J = 112255°^oCC
3.0
10
2.0
1.0
0.0
0
8
16
24
32
I _C , Collector-to-emitter Current (A)
SAFE OPERATING AREA
1
40
1
10
100
1000
V_CE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
T_J = 15 0°C
10
T_J = 12 5°C
T_J = 2 5°C
1
0.4
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V _FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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