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IRFI1310G Datasheet, PDF (7/8 Pages) International Rectifier – Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A) | |||
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IRFI1310G
D.U.T
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
⢠Low Stray Inductance
⢠Ground Plane
⢠Low Leakage Inductance
Current Transformer
RG
⢠dv/dt controlled by RG
⢠Driver same type as D.U.T.
VDD
⢠ISD controlled by Duty Factor "D"
⢠D.U.T. - Device Under Test
*
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
To Order
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