IRFI1310G Datasheet, PDF (5/8 Pages) International Rectifier – Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A)

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25
20
15
10
5
0
25
50
75
100
125
150
175
T_C , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRFI1310G
V_DS
V_GS
R_G
R_D
D.U.T.
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V_DD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
P_{D M}
0.01
S IN G LE P U LS E
(THERM AL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t ₁ / t ₂
0.001
0.00001
0.0001
0.001
0.01
2. Peak T_J= P _{D M}x Z _thJC + T _C
0.1
1
10
t1 , R ectangular P ulse D uration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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