IRF9Z24S Datasheet, PDF (7/10 Pages) International Rectifier – Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

IRF9Z24S/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
‚
-
+
Circuit Layout Considerations
• Low Stray Inductance
ƒ
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
„
-
+

R_G
V_GS
• dv/dt controlled by R_G
• I_SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- ^VDD
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[^VGS^=10V ] ***
D.U.T. I_SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform _{Diode Recovery}
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
[ ^VDD]
[I_SD]
*** V_GS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS