IRF9Z24S Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

IRF9Z24S/L
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Qg
Q_gs
Q_gd
td(on)
tr
td(off)
t_f
L_S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
-60 ––– –––
––– -0.056 –––
––– ––– 0.28
-2.0 ––– -4.0
1.4 ––– –––
––– ––– -100
––– ––– -500
––– ––– -100
––– ––– 100
––– ––– 19
––– ––– 5.4
––– ––– 11
––– 13 –––
––– 68 –––
––– 15 –––
––– 29 –––
––– 7.5 –––
––– 570 –––
––– 360 –––
––– 65 –––
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
nH
pF
Conditions
V_GS = 0V, I_D = -250µA
Reference to 25°C, I_D =-1mA…
VGS =-10V, ID = -6.6A „
VDS = VGS, ID = -250µA
VDS = -25V, ID = -6.6A…
V_DS = -60V, V_GS = 0V
V_DS = -48V, V_GS = 0V, T_J = 150°C
VGS = -20V
VGS = 20V
ID = -11A
V_DS = -48V
V_GS = -10V, See Fig. 6 and 13 „…
VDD = -30V
ID = -11A
RG = 18Ω
R_D = 2.5Ω, See Fig. 10 „
Between lead,
and center of die contact
VGS = 0V
VDS = -25V
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
t_on
Forward Turn-On Time
MOSFET symbol
D
––– ––– -11
A ^{showing the}
integral reverse
G
––– ––– -44
p-n junction diode.
S
––– ––– -6.3 V T_J = 25°C, I_S = -11A, V_GS = 0V „
––– 100 200 ns TJ = 25°C, IF = -11A
––– 320 640 nC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ V_DD = -25V, starting T_J = 25°C, L = 2.3mH
R_G = 25Ω, I_AS = -11A. (See Figure 12)
ƒ I_SD ≤ -11A, di/dt ≤ 140A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Uses IRF9Z24 data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.