IRF9383MTR1PBF Datasheet, PDF (7/9 Pages) International Rectifier – Isolation Switch for Input Power or Battery Application

IRF9383MPbF
D.U.T *
+
‚
-

R_G
+
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
-
• Low Leakage Inductance
Current Transformer
-^„ +
• di/dt controlled by R_G
• Driver same type as D.U.T.
• I_SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
V_DD
+
-
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
* V_GS=10V
D.U.T. I_SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
InIdnudcutcotroCr Cuurerrnetnt
Forward Drop
V_DD
Ripple ≤ 5%
I_SD
* V_GS = 5V for Logic Level Devices
Fig 20. Diode Reverse Recovery Test Circuit for P-Channel HEXFET^® Power MOSFETs
DirectFET^® Board Footprint, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
D
S
G
S
D
G=GATE
D=DRAIN
S=SOURCE
D
D
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February 28, 2014