IRF9383MTR1PBF Datasheet, PDF (1/9 Pages) International Rectifier – Isolation Switch for Input Power or Battery Application

IRF9383MPbF
Applications
l Isolation Switch for Input Power or Battery Application
l High Side Switch for Inverter Applications
Features and Benefits
l Environmentaly Friendly Product
l RoHs Compliant Containing no Lead,
no Bromide and no Halogen
l Common-Drain P-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
DirectFET^® P-Channel Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
-30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V
Q_{g tot} Q_gd Q_gs2
Q_rr
Q_oss V_gs(th)
67nC 29nC 9.4nC 315nC 59nC -1.8V
G
D
S
S
D
MX
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
MC
Description
The IRF9383MTRPbF combines the latest HEXFET^® P-Channel Power MOSFET Silicon technology with the advanced DirectFET^®
packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET^®
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance
by 80%.
Orderable part number
Package Type
IRF9383MTRPbF
IRF9383MTR1PbF
DirectFET Medium Can
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Tape and Reel
1000
Note
"TR1" suffix EOL notice #264
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
Max.
-30
±20
-22
-17
-160
-180
Units
V
A
12
10
ID = -22A
8
6
4
TJ = 125°C
2
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
-VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
14.0
12.0 ^{ID= -18A VDS= -24V}
10.0
VDS= -15V
VDS= -6.0V
8.0
6.0
4.0
2.0
0.0
0 20 40 60 80 100 120 140 160 180
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
1
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February 28, 2014