IRF8308MTR1PBF Datasheet, PDF (7/10 Pages) International Rectifier – RoHs Compliant Containing No Lead and Bromide

IRF8308MPbF
+
‚
-

R_G
D.U.T
+
ƒ
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-^„ +
• di/dt controlled by R_G
• Driver same type as D.U.T.
V_DD
+
• I_SD controlled by Duty Factor "D"
-
• D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
* V_GS=10V
D.U.T. I_SD Waveform
Reverse
Recovery
Body Diode Forward
Current
Current
di/dt
D.U.T. V_DS Waveform _{Diode Recovery}
dv/dt
V_DD
Re-Applied
Voltage
Body Diode
IInndduuccttoorr CCuurrernetnt
Forward Drop
Ripple ≤ 5%
I_SD
* V_GS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET^® Power MOSFETs
DirectFET™ Substrate and PCB Layout, MX Outline
(Medium Size Can, X-Designation).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
G = GATE
D = DRAIN
S = SOURCE
D
D
S
G
S
D
D
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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February 24, 2014