IRF8308MTR1PBF Datasheet, PDF (2/10 Pages) International Rectifier – RoHs Compliant Containing No Lead and Bromide

IRF8308MPbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
ΔΒV_DSS/ΔT_J
R_DS(on)
Drain-to-Source Breakdown Voltage
30
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
V_GS(th)
ΔV_GS(th)/ΔT_J
I_DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
130
Q_g
Total Gate Charge
–––
Q_gs1
Pre-Vth Gate-to-Source Charge
–––
Q_gs2
Post-Vth Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain Charge
–––
Q_godr
Gate Charge Overdrive
–––
Q_sw
Switch Charge (Q_gs2 + Q_gd)
–––
Q_oss
Output Charge
–––
R_G
Gate Resistance
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
Diode Characteristics
Parameter
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Pulsed Source Current
Ãg (Body Diode)
–––
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Typ.
–––
22
1.90
2.70
1.8
-6.1
–––
–––
–––
–––
–––
28
8.4
3.5
8.2
7.9
12
20
1.2
11
19
23
16
4404
885
424
Typ.
–––
–––
–––
20
34
Max. Units
Conditions
–––
–––
2.50
3.50
2.35
V VGS = 0V, ID = 250μA
mV/°C ^{Reference to 25°C, I}D ^{= 1mA}
i _mΩ V_GS = 10V, I_D = 27A
i V_GS = 4.5V, I_D = 21A
V ^VDS ^{= V}GS^{, I}D ^{= 100μA}
––– mV/°C
1.0
150
100
-100
–––
42
μA ^VDS ^{= 24V, V}GS ^{= 0V}
V_DS = 24V, V_GS = 0V, T_J = 125°C
nA ^VGS ^{= 20V}
V_GS = -20V
S VDS = 15V, ID =21A
–––
V_DS = 15V
––– nC ^VGS ^{= 4.5V}
–––
I_D = 21A
–––
See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
2.2
–––
Ãi Ω
V_DD = 15V, V_GS = 4.5V
–––
I_D = 21A
––– ns R_G= 1.8Ω
–––
–––
V_GS = 0V
––– pF VDS = 15V
–––
ƒ = 1.0MHz
Max. Units
Conditions
150
MOSFET symbol
A showing the
212
integral reverse
p-n junction diode.
1.0
i _V T_J = 25°C, I_S = 21A, V_GS = 0V
30
51
i ^{ns TJ = 25°C, IF =21A}
nC di/dt = 300A/μs
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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February 24, 2014