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IRF7823PBF Datasheet, PDF (7/10 Pages) International Rectifier – Power MOSFET Selection for Non-Isolated DC/DC Converters | |||
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IRF7823PbF
+
Â
-
Â
RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Â
Circuit Layout Considerations
⢠Low Stray Inductance
⢠Ground Plane
-
⢠Low Leakage Inductance
Current Transformer
-Â +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
⢠dv/dt controlled by RG
⢠Driver same type as D.U.T.
VDD
+
⢠ISD controlled by Duty Factor "D"
-
⢠D.U.T. - Device Under Test
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ⤠5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
* VGS=10V
VDD
ISD
Current Regulator
Same Type as D.U.T.
50Kâ¦
12V
.2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG
ID
Current Sampling Resistors
Vds
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Id
Vgs
Fig 17. Gate Charge Test Circuit
Fig 18. Gate Charge Waveform
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