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| IRF7823PBF Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET Selection for Non-Isolated DC/DC Converters | |||
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IRF7823PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30 âââ âââ V VGS = 0V, ID = 250µA
âââ
âââ
âââ
0.024
6.9
9.3
âââ
8.7
11.9
V/°C Reference to 25°C, ID = 1mA
e m⦠VGS = 10V, ID = 13A
e VGS = 4.5V, ID = 10A
1.35 1.8 2.35 V VDS = VGS, ID = 25µA
âââ -5.1 âââ mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0 µA VDS = 24V, VGS = 0V
âââ âââ 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
27 âââ âââ S VDS = 15V, ID = 10A
Qg
Total Gate Charge
âââ 9.1 14
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 2.7 âââ
âââ 0.84 âââ
âââ 3.2 âââ
âââ 2.4 âââ
VDS = 15V
nC VGS = 4.5V
ID = 10A
See Fig. 17 & 18
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 4.0 âââ
Qoss
Output Charge
Rg
Gate Resistance
âââ 5.8 âââ nC VDS = 16V, VGS = 0V
âââ 2.0 3.0 â¦
td(on)
tr
td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
âââ 7.2 âââ
VDD = 16V, VGS = 4.5V
âââ 8.2 âââ
ID = 10A
âââ 10 âââ ns Clamped Inductive Load
tf
Fall Time
âââ 2.7 âââ
See Fig. 15
Ciss
Input Capacitance
âââ 1110 âââ
VGS = 0V
Coss
Output Capacitance
âââ 240 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 110 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
230
10
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
Conditions
âââ âââ 3.1
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
A showing the
âââ âââ 100
integral reverse
G
âââ âââ 1.0
e p-n junction diode.
S
V TJ = 25°C, IS = 10A, VGS = 0V
âââ 7.8
âââ 9.0
12
14
eà ns TJ = 25°C, IF = 10A, VDD = 15V
nC di/dt = 500A/µs See Fig. 16
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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