IRF7555PBF Datasheet, PDF (7/9 Pages) International Rectifier – HEXFET® Power MOSFET

IRF7555PbF
Peak Diode Recovery dv/dt Test Circuit
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Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
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-
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• dv/dt controlled by R_G
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• I_SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
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* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
V_GS=10V
D.U.T. I_SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
V_DD
I_SD
*** V_GS = 5.0V for Logic Level and 3V Drive Devices
Fig -14 For P Channel HEXFETS
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