IRF7555PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET® Power MOSFET

PD -95993
IRF7555PbF
l Trench Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
S1
l Very Small SOIC Package
G1
l Low Profile (<1.1mm)
S2
l Available in Tape & Reel
G2
l Lead-Free
Description
New trench HEXFET^® power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
HEXFET^® Power MOSFET
1
8
D1
2
7
D1
3
6
D2
4
5
D2
Top View
V_DSS = -20V
R_DS(on) = 0.055Ω
The new Micro8™ package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
Micro8™
Absolute Maximum Ratings
Parameter
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Drain-Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipation„
Maximum Power Dissipation„
Linear Derating Factor
V_GS
E_AS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy„
Peak Diode Recovery dv/dt ‚
T_J , T_STG
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Max.
R_θJA
Maximum Junction-to-Ambient „
www.irf.com
Max.
-20
-4.3
-3.4
-34
1.25
0.8
10
± 12
36
1.1
-55 to + 150
240 (1.6mm from case)
Units
V
A
W
W
mW/°C
V
mJ
V/ns
°C
Units
100
°C/W
1
2/22/05