IRF6662PBF_15 Datasheet, PDF (7/10 Pages) International Rectifier – Application Specific MOSFETs

IRF6662PbF
D.U.T
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
-
• Low Leakage Inductance
+
Current Transformer
-
-
+
R_G
• di/dt controlled by R_G
• Driver same type as D.U.T.
V_DD
+
• I_SD controlled by Duty Factor "D"
-
• D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
* V_GS=10V
D.U.T. I_SD Waveform
Reverse
Recovery
Body Diode Forward
Current
Current
di/dt
D.U.T. V_DS Waveform _{Diode Recovery}
dv/dt
V_DD
Re-Applied
Voltage
Body Diode
Inductoorr CCuurrernetnt
Forward Drop
Ripple ≤ 5%
I_SD
* V_GS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET^® Power MOSFETs
DirectFET™ Substrate and PCB Layout, MZ Outline
(Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
www.irf.com
7