IRF6662PBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – Application Specific MOSFETs

PD - 97243A
IRF6662PbF
IRF6662TRPbF
DirectFET™ Power MOSFET
RoHs Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
100V max ±20V max
17.5mΩ@ 10V
Q_{g tot} Q_gd
22nC 6.8nC
Q_gs2
1.2nC
Q_rr
50nC
Q_oss V_gs(th)
11nC 3.9V
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
DG
S
D
S
Compatible with existing Surface Mount Techniques
MZ
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MZ
Description
The IRF6662PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6662PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom
applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
I_DM
Pulsed Drain Current
E_AS
Single Pulse Avalanche Energy
I_AR
Avalanche Current
Max.
100
±20
8.3
6.6
47
66
39
4.9
Units
V
A
mJ
A
100
ID = 4.9A
80
60
40
TJ = 125°C
20
TJ = 25°C
0
4
6
8
10
12
14
16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
12.0
10.0 ^{ID= 4.9A VDS= 80V}
8.0
VDS= 50V
VDS= 20V
6.0
4.0
2.0
0.0
0
5
10
15
20
25
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs.
Gate-to-Source Voltage
T_C measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T_J = 25°C, L = 3.2mH, R_G = 25Ω, I_AS = 4.9A.
1
08/25/06