IRHM7230 Datasheet, PDF (6/12 Pages) International Rectifier – REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

IRHM7230, IRHM8230 Devices
Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc
Radiation Characterstics
Fig 10. Typical Output Characteristics
Pre-Irradiation
Fig 11. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 12. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
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Fig 13. Typical Output Characteristics
Post-Irradiation 1 Mega Rads(Si)
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