IRHM7230 Datasheet, PDF (1/12 Pages) International Rectifier – REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

PD - 90713C
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET^® TRANSISTOR
IRHM7230
IRHM8230
N CHANNEL
MEGA HARD RAD
200Volt, 0.40Ω, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x10⁶ Rads(Si). Under
identical pre- and post-irradiation test conditions, In-
ternational Rectifier’s RAD HARD HEXFETs retain
identical electrical specifications up to 1 x 10⁵ Rads
(Si) total dose. No compensation in gate drive circuitry
is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 10¹² Rads
(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD HARD process utilizes
International Rectifier’s patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
Absolute Maximum Ratings 
Product Summary
Part Number
BVDSS
IRHM7230
200V
IRHM8230
200V
RDS(on)
0.40Ω
0.40Ω
ID
9.0A
9.0A
Features:
n Radiation Hardened up to 1 x 10⁶ Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
IRHM7230, IRHM8230 Units
Continuous Drain Current
Continuous Drain Current
9.0
6.0
A
Pulsed Drain Current ‚
36
Max. Power Dissipation
75
W
Linear Derating Factor
0.60
W/°C
Gate-to-Source Voltage
±20
V
Single Pulse Avalanche Energy ƒ
330
mJ
Avalanche Current ‚
9.0
A
Repetitive Avalanche Energy‚
7.5
mJ
Peak Diode Recovery dv/dt „
Operating Junction
Storage Temperature Range
5.0
-55 to 150
V/ns
o_C
Lead Temperature
Weight
300 (0.063 in. (1.6mm) from case for 10s)
9.3 (typical)
g
www.irf.com
1
10/14/98