IRGS4045DPDF Datasheet, PDF (6/12 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE

20
18
16
14
12
10
8
6
0 200 400 600 800 1000 1200
diF /dt (A/μs)
Fig. 19- Typical Diode I_RR vs. di_F/dt
V_CC= 400V; V_GE= 15V;
I_CE= 6.0A; T_J = 175°C
350
300
RG = 10
250
RG = 22
200
RG = 47
150
RG = 100
100
50
2
4
6
8 10 12 14
IF (A)
Fig. 21 - Typical Diode E_RR vs. I_F
T_J = 175°C
1000
Cies
100
Coes
10
Cres
1
0
100 200 300 400 500
VCE (V)
Fig. 23- Typ. Capacitance vs. V_CE
V_GE= 0V; f = 1MHz
6
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IRGS4045DPbF
1200
1000
800
600
12A
10
22
47
6.0A
100
400
3.0A
200
0
500
1000
diF /dt (A/μs)
Fig. 20 - Typical Diode Q_RR
V_CC= 400V; V_GE= 15V; T_J = 175°C
1500
20
50
Tsc
15
40
Isc
10
30
5
20
0
10
8
10
12
14
16
18
VGE (V)
Fig. 22- Typ. V_GE vs. Short Circuit Time
V_CC=400V, T_C =25°C
16
14
VCES = 400V
12
VCES= 300V
10
8
6
4
2
0
0 2 4 6 8 10 12 14
Q _G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. V_GE
I_CE = 6.0A, L=600μH
October 10, 2012