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| IRGS4045DPDF Datasheet, PDF (1/12 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE | |||
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IRGS4045DPbF
VCES = 600V
IC ï½ 6.0A, TC = 100°C
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
C
tsc > 5µs, Tjmax = 175°C
VCE(on) typ. ï½ 1.7V
G
E
n-channel
E
G
D2-Pak
IRGS4045DPbF
Applications
ï· Appliance Motor Drive
ï· Inverters
ï· SMPS
G
Gate
C
Colletor
E
Emitter
Fe a ture s
ï®
Be ne fi ts
Low VCE(ON) and switching losses
High efficiency in a wide range of applications and
switching frequencies
Square RBSOA and maximum junction temperature 175°C
Improved reliability due to rugged hard switching performance
and higher power capability
Positive VCE(ON) temperature coefficient and tighter
distribution of parameters
5μs short circuit SOA
Ultra fast soft recovery copak diode
Lead-free, RoHS compliant
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Performance optimized for motor drive operation
Environmentally friendly
Base part number
IRGS4045DPbF
Package Type
D2Pak
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
800
800
Orderable Part Number
IRGS4045DPbF
IRGS4045DTRLPbF
IRGS4045DTRRPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
IC@ TC = 25°C
Continuous Collector Current
IC@ TC = 100°C
Continuous Collector Current
ICM
ILM
c Pulsed Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
IF@TC=25°C
Diode Continuous Forward Current
IF@TC=100°C
IFM
VGE
Diode Continuous Forward Current
d Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC =25°
Maximum Power Dissipation
PD @ TC =100°
Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
600
V
12
6.0
18
24
A
8.0
4.0
24
± 20
V
± 30
77
W
39
°C
-55 to + 175
300 (0.063 in. (1.6mm) from case)
Rï±JC
Rï±JC
Rï±CS
Rï±JA
e Parameter
Junction-to-Case - IGBT
e Junction-to-Case - Diode
Case-to-Sink, Flat, Greased Surface
g Junction-to-Ambient (PCB Mountet, steady-state)
Min.
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.5
âââ
Max.
1.9
6.3
âââ
40
Units
°C/W
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2012 International Rectifier
October 10, 2012
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