IRGP6630DPBF_15 Datasheet, PDF (6/13 Pages) International Rectifier – Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

25
RG ₌ 10
20
RG ₌ 22
15
RG ₌ 47
10
5
RG ₌ 100
0
2
4
6
8
10
12
IF (A)
Fig. 18 - Typ. Diode I_RR vs. I_F
T_J = 175°C
25
IRGP6630DPbF/IRGP6630D-EPbF
25
20
15
10
5
0
0
20
40
60
80
100
RG (
Fig. 19 - Typ. Diode I_RR vs. R_G
T_J = 175°C
2000
20
1500
12A
15
1000
47
22
10
100
6A
10
500
3A
5
0 200 400 600 800 1000 1200
diF /dt (A/µs)
Fig. 20 - Typ. Diode I_RR vs. di_F/dt
V_CC = 400V; V_GE = 15V; I_F = 6A; T_J = 175°C
350
RG = 10
300
RG = 22
250
RG = 47
RG = 100
200
0
0 200 400 600 800 1000 1200 1400
diF /dt (A/µs)
Fig. 21 - Typ. Diode Q_RR vs. di_F/dt
V_CC = 400V; V_GE = 15V; T_J = 175°C
20
100
16
12
Tsc
80
Isc
60
150
8
40
100
4
20
50
0
2
4
6
8
10
12
IF (A)
Fig. 22 - Typ. Diode E_RR vs. I_F
T_J = 175°C
0
0
9 10 11 12 13 14 15 16
VGE (V)
Fig. 23 - V_GE vs. Short Circuit Time
V_CC = 400V; T_C = 150°C
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November 14, 2014