IRGP6630DPBF_15 Datasheet, PDF (1/13 Pages) International Rectifier – Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

V_CES = 600V
I_C = 30A, T_C =100°C
IRGP6630DPbF
IRGP6630D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
C
C
t_SC 5µs, T_J(max) = 175°C
V_CE(ON) typ. = 1.65V @ IC = 18A
Applications
 Welding
 H Bridge Converters
G
E
n-channel
G
Gate
E
C
G
IRGP6630DPbF
TO‐247AC
C
Collector
GCE
IRGP6630D‐EPbF
TO‐247AD
E
Emitter
Features
Low V_CE(ON) and Switching Losses
Optimized Diode for Full Bridge Hard Switch Converters
Square RBSOA and Maximum Temperature of 175°C
5µs Short Circuit
Positive V_{CE (ON)} Temperature Co-efficient
Lead-free, RoHS compliant
Benefits
High Efficiency in a Wide Range of Applications
Optimized for Welding and H Bridge Converters
Improved Reliability due to Rugged Hard Switching
Performance and High Power Capability
Enables Short Circuit Protection Operation
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Base part number
IRGP6630DPbF
IRGP6630D-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP6630DPbF
IRGP6630D-EPbF
Absolute Maximum Ratings
Parameter
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_FRM @ T_C = 100°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V_GE = 15V
Clamped Inductive Load Current, V_GE = 20V 
Diode Repetitive Peak Forward Current
I_FM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Diode Maximum Forward Current 
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
47
30
54
72
15
72
±20
192
96
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R_JC (IGBT)
R_JC (Diode)
R_CS
R_JA
Thermal Resistance Junction-to-Case-(each IGBT) 
Thermal Resistance Junction-to-Case-(each Diode) 
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.78
5.9
–––
40
Units
°C/W
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
November 14, 2014