IRG7PSH50UDPBF_15 Datasheet, PDF (6/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG7PSH50UDPbF
70
60
RG ₌ 5.0Ω
50
40 _{RG = 10Ω}
30
RG ₌ 47Ω
20
RG = 100Ω
10
0
20
40
60
IF (A)
80 100
Fig. 17 - Typ. Diode I_RR vs. I_F
T_J = 150°C
60
50
40
30
20
200 300 400 500 600 700 800
diF /dt (A/µs)
Fig. 19 - Typ. Diode I_RR vs. di_F/dt
V_CC = 600V; V_GE = 15V; I_F = 50A; T_J = 150°C
2500
70
60
50
40
30
20
10
0
20
40
60
80 100
RG (Ω)
Fig. 18 - Typ. Diode I_RR vs. R_G
T_J = 150°C
9000
8000
7000
6000
100A
5.0Ω
10Ω
5000
4000
3000
2000
47Ω
50A
100Ω
25A
1000
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 20 - Typ. Diode Q_RR vs. di_F/dt
V_CC = 600V; V_GE = 15V; T_J = 150°C
2000
1500
1000
RG = 5.0Ω
RG = 10Ω
500 ^{RG = 47Ω}
RG = 100Ω
0
0
20
40
60
IF (A)
80 100
Fig. 21 - Typ. Diode E_RR vs. I_F
T_J = 150°C
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