IRG7PSH50UDPBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG7PSH50UDPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)CES
Parameter
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units Conditions
1200 —
—
e V V_GE = 0V, I_C = 100µA
∆V_(BR)CES/∆T_J Temperature Coeff. of Breakdown Voltage
— 1.0 — V/°C VGE = 0V, IC = 1.0mA (25°C-150°C)
V_CE(on)
Collector-to-Emitter Saturation Voltage
— 1.7 2.0
I_C = 50A, V_GE = 15V, T_J = 25°C
— 2.0 —
V IC = 50A, VGE = 15V, TJ = 150°C
V_GE(th)
Gate Threshold Voltage
3.0
—
6.0
V VCE = VGE, IC = 2.0mA
∆V_GE(th)/∆TJ Threshold Voltage temp. coefficient
—
-17
— mV/°C VCE = VGE, IC = 1.0mA (25°C - 150°C)
gfe
Forward Transconductance
—
55
—
S VCE = 50V, IC = 50A, PW = 30µs
I_CES
Collector-to-Emitter Leakage Current
—
2.0 100 µA VGE = 0V, VCE = 1200V
— 3700 —
V_GE = 0V, V_CE = 1200V, T_J = 150°C
V_FM
Diode Forward Voltage Drop
—
3.0 3.9
V IF = 50A
— 2.7 —
I_F = 50A, T_J = 150°C
I_GES
Gate-to-Emitter Leakage Current
—
— ±200 nA VGE = ±30V
Switching Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge (turn-on)
— 290 440
I_C = 50A
Q_ge
Gate-to-Emitter Charge (turn-on)
—
40
60
nC VGE = 15V
Q_gc
Gate-to-Collector Charge (turn-on)
— 110 170
V_CC = 600V
E_on
Turn-On Switching Loss
— 3600 4600
I_C = 50A, V_CC = 600V, V_GE = 15V
E_off
Turn-Off Switching Loss
— 2200 3200 µJ RG = 5.0Ω, L = 200µH,TJ = 25°C
E_total
Total Switching Loss
— 5800 7800
Energy losses include tail & diode reverse recovery
t_d(on)
Turn-On delay time
— 35 55
t_r
Rise time
— 40 60 ns
t_d(off)
Turn-Off delay time
— 430 500
t_f
Fall time
— 45 65
E_on
Turn-On Switching Loss
E_off
Turn-Off Switching Loss
— 5080 —
— 3370 —
I_C = 50A, V_CC = 600V, V_GE=15V
eà µJ R_G=5.0Ω, L=200µH, T_J = 150°C
E_total
Total Switching Loss
— 8450 —
Energy losses include tail & diode reverse recovery
t_d(on)
Turn-On delay time
— 30 —
t_r
Rise time
— 40 — ns
t_d(off)
Turn-Off delay time
— 480 —
t_f
Fall time
— 170 —
C_ies
Input Capacitance
— 6000 —
pF VGE = 0V
C_oes
Output Capacitance
— 300 —
V_CC = 30V
C_res
Reverse Transfer Capacitance
— 130 —
f = 1.0Mhz
T_J = 150°C, I_C = 200A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
V_CC = 960V, Vp =1200V
Rg = 5.0Ω, V_GE = +20V to 0V
Erec
Reverse Recovery Energy of the Diode
— 1510 —
µJ TJ = 150°C
t_rr
Diode Reverse Recovery Time
I_rr
Peak Reverse Recovery Current
— 190 —
— 5760 —
ns VCC = 600V, IF = 5.0A
A ^{Rg = 5.0Ω, L =1.0mH}
Notes:
 V_CC = 80% (V_CES), V_GE = 20V, L = 200µH, R_G = 5.0Ω.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V_(BR)CES safely.
„ R_θ is measured at T_J of approximately 90°C.
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