IRG7PH50UPBF_15 Datasheet, PDF (6/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH50UPbF/IRG7PH50U-EP
10000
1000
Cies
Coes
100
Cres
10
0
100 200 300 400 500 600
VCE (V)
Fig. 17 - Typ. Capacitance vs. V_CE
V_GE= 0V; f = 1MHz
16
14
VCES = 600V
12
VCES = 400V
10
8
6
4
2
0
0 50 100 150 200 250 300
Q _G, Total Gate Charge (nC)
Fig. 18- Typical Gate Charge vs. V_GE
I_CE = 50A
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci i/Ri
R_2R2
τ_{2 τ2}
R_3R3
τ_{3 τ3}
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
R_4R4
τ_Cτ
Ri (°C/W)
0.00296
0.08150
τi (sec)
0.000009
0.000180
τ_{4 τ4}
0.11707 0.003342
0.06917 0.017016
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC
6
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