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| IRG7PG42UDPBF_15 Datasheet, PDF (6/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR | |||
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50
RG = ïµï®ï°ï
40
RG = ï±ï°ï
30
20
RG = ï´ï·ï
RG = ï±ï°ï°ï
IRG7PG42UDPbF/IRG7PG42UD-EPbF
40
35
30
25
10
15 20 25 30 35 40 45 50 55 60
IF (A)
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 150°C
40
35
30
25
20
0
200 400 600 800 1000 1200
diF /dt ( A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 30A; TJ = 150°C
3500
3000
2500
RG = 5.0ï
RG = 10ï
RG = 47ï
RG = 100 ï
20
0
20
40
60
80
100
RG (ïï©
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 150°C
9000
8000
7000
6000
5000
4000
3000
ï±ï°ï°ï
60A
ïµï®ï°ï
ï±ï°ï
ï´ï·ï
30A
15A
2000
0 200 400 600 800 1000 1200 1400
diF /dt (A/µs)
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; TJ = 150°C
2000
1500
1000
500
15 20 25 30 35 40 45 50 55 60
IF (A)
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 150°C
6 www.irf.com © 2014 International Rectifier
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April 29, 2014
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