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| IRG7PG42UDPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR | |||
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IRG7PG42UDPbF
IRG7PG42UD-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
ï·ï Low VCE (ON) trench IGBT technology
ï·ï Low switching losses
ï·ï Square RBSOA
ï·ï 100% of the parts tested for ILMï
ï·ï Positive VCE (ON) temperature co-efficient
ï·ï Ultra fast soft recovery co-pak diode
ï·ï Tight parameter distribution
ï·ï Lead-free package
Benefits
ï·ï High efficiency in a wide range of applications
ï·ï Suitable for a wide range of switching frequencies
due to low VCE(on) and low switching losses
ï·ï Rugged transient performance for increased reliability
ï·ï Excellent current sharing in parallel operation
Applications
ï·ï U.P.S.
ï·ï Welding
ï·ï Solar Inverter
ï·ï Induction heating
C
G
E
n-channel
C
VCES = 1000V
IC = 45A, TC = 100°C
TJ(MAX) = 150°C
VCE(ON) typ. = 1.7V @ IC = 30A
C
GCE
IRG7PG42UDPbF
TO-247AC
GC E
IRG7PG42UD-EPbF
TO-247AD
G
Gate
C
Collector
E
Emitter
Base part number
Package Type
Standard Pack
Form
Quantity
Orderable Part Number
IRG7PG42UDPbF
IRG7PG42UD-EPbF
TO-247AC
TO-247AD
Tube
Tube
25
IRG7PG42UDPbF
25
IRG7PG42UD-EPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current (Silicon Limited)
IC @ TC = 100°C Continuous Collector Current (Silicon Limited)
ICM
Pulse Collector Current, VGE = 15V ï
ILM
Clamped Inductive Load Current, VGE = 20V ï
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM
Diode Maximum Forward Current ï
VGE
Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1000
85ï
45
90
120
85
45
120
±30
320
130
-55 to +150
300 (0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
RθJC (IGBT) Junction-to-Case (IGBT) ï
RθJC (Diode) Junction-to-Case (Diode) ï
RθCS
Case-to-Sink (flat, greased surface)
RθJA
Junction-to-Ambient (typical socket mount)
Min.
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.24
âââ
Max.
0.39
0.56
âââ
40
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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April 29, 2014
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