IRG4RC10KPBF Datasheet, PDF (6/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT

IRG4RC10KPbF
1.2 _{RG = 1O0h0mΩ}
T_J = 150° C
V_CC = 480V
1.0 ^VGE ^{= 15V}
0.8
0.6
0.4
0.2
2
4
6
8
10
I _C, Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector Current
100 _{VGE = 20V}
T _J = 125 ^oC
10
SAFE OPERATING AREA
1
1
10
100
1000
V_CE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
L
D.U.T.
V_C *
50V
1000V
c
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Load Test Circuit
0 - 480V
480µF
960V
RL =
4
480V
X I_C@25°C
Fig. 13b - Pulsed Collector
Current Test Circuit
I_C
L
Driver*
V_C
D.U.T.
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
™Ã
d
* Driver same type
e
as D.U.T., VC = 480V
6
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