IRG4RC10KPBF Datasheet, PDF (2/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT

IRG4RC10KPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)CES
V_(BR)ECS
∆V(BR)CES/∆TJ
V_CE(ON)
V_GE(th)
∆V_GE(th)/∆T_J
g_fe
I_CES
I_GES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage „
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance …
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
600
18
—
—
—
—
3.0
—
1.2
—
—
—
—
Typ. Max. Units
Conditions
— — V V_GE = 0V, I_C = 250µA
— — V V_GE = 0V, I_C = 1.0A
0.58 — V/°C V_GE = 0V, I_C = 1.0mA
2.39 2.62
I_C = 5.0A
V_GE = 15V
3.25 —
V
I_C = 9.0A
See Fig.2, 5
2.63 —
I_C = 5.0A , T_J = 150°C
— 6.5
V_CE = V_GE, I_C = 250µA
-11 — mV/°C V_CE = V_GE, I_C = 250µA
1.8 — S V_CE = 50 V, I_C = 5.0A
— 250 _µA V_GE = 0V, V_CE = 600V
— 2.0
V_GE = 0V, V_CE = 10V, T_J = 25°C
— 1000
V_GE = 0V, V_CE = 600V, T_J = 150°C
— ±100 nA V_GE = ±20V
Switching Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_sc
t_d(on)
t_r
t_d(off)
t_f
E_ts
L_E
C_ies
C_oes
C_res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
Typ.
19
2.9
9.8
11
24
51
190
0.16
0.10
0.26
—
11
27
67
350
0.47
7.5
220
29
7.5
Max.
29
4.3
15
—
—
77
290
—
—
0.32
—
—
—
—
—
—
—
—
—
—
Units
nC
ns
mJ
µs
ns
mJ
nH
pF
Conditions
I_C = 5.0A
V_CC = 400V
See Fig.8
V_GE = 15V
T_J = 25°C
I_C = 5.0A, V_CC = 480V
V_GE = 15V, R_G = 100Ω
Energy losses include "tail"
See Fig. 9,10,14
V_CC = 400V, T_J = 125°C
V_GE = 15V, R_G = 100Ω , V_CPK < 500V
T_J = 150°C,
I_C = 5.0A, V_CC = 480V
V_GE = 15V, R_G = 100Ω
Energy losses include "tail"
See Fig. 10,11,14
Measured 5mm from package
V_GE = 0V
V_CC = 30V
See Fig. 7
ƒ = 1.0MHz
 Repetitive rating; V_GE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ V_CC = 80%(V_CES), V_GE = 20V, L = 10µH, R_G = 100Ω,
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
… Pulse width 5.0µs, single shot.
2
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