IRG4BC20UDS Datasheet, PDF (6/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)

IRG4BC20UD-S
1.2
R_G = 50 Ω
T _J = 150°C
V _CC = 480V
V GE = 15V
0.9
0.6
1000
V_{GGE E}= 2 0V
T_J = 125°C
100
SAFE OPERATING AREA
10
0.3
1
0.0
0
A
2
4
6
8
10
12
14
I_C , C ollector-to-E m itter Current (A )
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
0 .1
1
10
100
1000
V_{C E} , Collector-to-Em itter Voltage (V)
Fig. 12 - Turn-Off SOA
10
T_J = 1 50 °C
T_J = 1 25 °C
T_J = 25 °C
1
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Forward Volta ge D ro p - V _FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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