IRG4BC20UDS Datasheet, PDF (2/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)

IRG4BC20UD-S
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)CES
∆V(BR)CES/∆TJ
V_CE(on)
V_GE(th)
∆V_GE(th)/∆T_J
g_fe
I_CES
V_FM
I_GES
Collector-to-Emitter Breakdown Voltageƒ 600
Temperature Coeff. of Breakdown Voltage –––
Collector-to-Emitter Saturation Voltage –––
–––
–––
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance „
1.4
Zero Gate Voltage Collector Current –––
–––
Diode Forward Voltage Drop
–––
–––
Gate-to-Emitter Leakage Current
–––
––– ––– V
0.69 ––– V/°C
1.85 2.1
2.27 ––– V
1.87 –––
––– 6.0
-11 ––– mV/°C
4.3 ––– S
––– 250 µA
––– 1700
1.4 1.7 V
1.3 1.6
––– ±100 nA
V_GE = 0V, I_C = 250µA
V_GE = 0V, I_C = 1.0mA
I_C = 6.5A
V_GE = 15V
I_C = 13A
See Fig. 2, 5
I_C = 6.5A, T_J = 150°C
V_CE = V_GE, I_C = 250µA
V_CE = V_GE, I_C = 250µA
V_CE = 100V, I_C = 6.5A
V_GE = 0V, V_CE = 600V
V_GE = 0V, V_CE = 600V, T_J = 150°C
I_C = 8.0A
See Fig. 13
I_C = 8.0A, T_J = 150°C
V_GE = ±20V
Switching Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Qge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
L_E
C_ies
C_oes
C_res
t_rr
I_rr
Q_rr
di_(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t_b
Min. Typ. Max. Units
Conditions
––– 27 41
––– 4.5 6.8
I_C = 6.5A
nC V_CC = 400V
See Fig. 8
––– 10 16
––– 39 –––
V_GE = 15V
T_J = 25°C
––– 15 ––– ns I_C = 6.5A, V_CC = 480V
––– 93 140
V_GE = 15V, R_G = 50Ω
––– 110 170
Energy losses include "tail" and
––– 0.16 –––
diode reverse recovery.
––– 0.13 ––– mJ See Fig. 9, 10, 11, 18
––– 0.29 0.3
––– 38 –––
T_J = 150°C, See Fig. 9, 10, 11, 18
––– 17 ––– ns I_C = 6.5A, V_CC = 480V
––– 100 –––
V_GE = 15V, R_G = 50Ω
––– 220 –––
Energy losses include "tail" and
––– 0.49 ––– mJ diode reverse recovery.
––– 7.5 ––– nH Measured 5mm from package
––– 530 –––
V_GE = 0V
––– 39 ––– pF V_CC = 30V
See Fig. 7
––– 7.4 –––
ƒ = 1.0MHz
––– 37 55 ns T_J = 25°C See Fig.
––– 55 90
––– 3.5 5.0
T_J = 125°C 14
I_F = 8.0A
A T_J = 25°C See Fig.
––– 4.5 8.0
T_J = 125°C 15
––– 65 138 nC T_J = 25°C See Fig.
V_R = 200V
––– 124 360
T_J = 125°C
16 di/dt 200A/µs
––– 240 ––– A/µs T_J = 25°C See Fig.
––– 210 –––
T_J = 125°C 17
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