IRG4BC10UDPBF Datasheet, PDF (6/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISROT WITH ULTRAFAST SOFR RECOVERY DIODE UltraFast CoPack IGBT

IRG4BC10UDPbF
1.4 _{RG = 1O0h0mΩ}
T _J = 150° C
1.2 VCC = 480V
V_GE = 15V
1.0
0.8
0.6
0.4
0.2
0.0
0
2
4
6
8
10
I _C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
100 _{VGE = 20V}
T _J = 125 ^oC
10
SAFE OPERATING AREA
1
1
10
100
1000
V_CE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
10
T_J = 150°C
T_J = 125°C
T = 25°C
J
1
0.1
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Forwaarrdd VVoollttaaggee DDrroopp -- VV_FMFM((VV))
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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