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IRG4BC10UDPBF Datasheet, PDF (1/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISROT WITH ULTRAFAST SOFR RECOVERY DIODE UltraFast CoPack IGBT | |||
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PD - 94905
IRG4BC10UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
 UltraFast: Optimized for high operating
up to 80 kHz in hard switching, >200 kHz in
resonant mode
 Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
G
previous Generation
 IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
E
n-channel
bridge configurations
 Industry standard TO-220AB package
 Lead-Free
Benefits
 Generation 4 IGBT's offer highest efficiencies
available
 IGBT's optimized for specific application conditions
 HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
UltraFast CoPack IGBT
VCES = 600V
VCE(on) typ. = 2.15V
@VGE = 15V, IC = 5.0A
tf (typ.) = 140ns
TO-220AB
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Â
Clamped Inductive Load Current Â
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
8.5
5.0
34
34
4.0
16
± 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfÂin (1.1 NÂm)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Â
Â
Â
Â
Â
Typ.
Â
Â
0.50
Â
2 (0.07)
Max.
3.3
7.0
Â
80
Â
Units
°C/W
g (oz)
www.irf.com
1
12/23/03
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