IRFPS40N60KPBF Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFPS40N60KPbF
1200
960
ID
TOP
17A
24A
BOTTOM
38A
720
480
240
0
25
50
75
100
125
150
Starting Tj, Junction Temperature
( ^°C)
Fig 12a. Maximum Avalanche Energy
Vs. Drain Current
5.0
4.5
4.0
ID = 250µA
3.5
3.0
2.5
2.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
I_AS
0.01Ω
+
- ^VDD
A
Fig 12c. Unclamped Inductive Test Circuit
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
+
D.U.T. -V^DS
V_GS
3mA
I_G
I_D
Current Sampling Resistors
Fig 13a. Gate Charge Test Circuit
6
V_(BR)DSS
tp
I_AS
Fig 12d. Unclamped Inductive Waveforms
Q_G
V_GS V
Q_GS
Q_GD
V_G
Charge
Fig 13b. Basic Gate Charge Waveform
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