IRFPS40N60KPBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFPS40N60KPbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
I_DSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
I_GSS
Gate-to-Source Reverse Leakage
600 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.63 ––– V/°C Reference to 25°C, I_D = 1mA†
––– 0.110 0.130 Ω V_GS = 10V, I_D = 24A „
3.0 ––– 5.0 V V_DS = V_GS, I_D = 250µA
––– ––– 50
––– ––– 250
µA ^{VDS = 600V, VGS = 0V}
V_DS = 480V, V_GS = 0V, T_J = 125°C
––– ––– 100 _nA V_GS = 30V
––– ––– -100
V_GS = -30V
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
g_fs
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
21 ––– ––– S V_DS = 50V, I_D = 24A
––– ––– 330
I_D = 38A
––– ––– 84 nC V_DS = 480V
––– ––– 150
V_GS = 10V, See Fig. 6 and 13 „
––– 47 –––
V_DD = 300V
––– 110 ––– _ns I_D = 38A
––– 97 –––
R_G = 4.3Ω
––– 60 –––
V_GS = 10V,See Fig. 10 „
––– 7970 –––
V_GS = 0V
––– 750 –––
V_DS = 25V
––– 75 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 9440 –––
––– 200 –––
––– 260 –––
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 480V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 480V …
Diode Characteristics
Symbol
I_S
ISM
V_SD
t_rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
t_on
Reverse Recovery Current
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting T_J = 25°C, L = 0.84mH, R_G = 25Ω,
I_AS = 38A, dv/dt =5.5V/ns (See Figure 12a)
ƒ I_SD ≤ 38A, di/dt ≤ 150A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
2
Min. Typ. Max. Units
Conditions
––– ––– 40
MOSFET symbol
D
A ^{showing the}
––– ––– 160
integral reverse
G
p-n junction diode.
S
––– ––– 1.5 V T_J = 25°C, I_S = 38A, V_GS = 0V „
––– 630 950
––– 730 1090 ^ns
––– 14 20 _µC
––– 17 25
T_J = 25°C
T_J = 125°C
T_J = 25°C
T_J = 125°C
I_F = 38A
di/dt = 100A/µs „
––– 39 58 A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS
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