IRFBC30APBF Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET® Power MOSFET

IRFBC30APbF
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
I_AS
0.01Ω
+
- ^VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V_(BR)DSS
tp
I_AS
Fig 12b. Unclamped Inductive Waveforms
Q_G
10 V
Q_GS
Q_GD
V_G
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
+
D.U.T. -V^DS
V_GS
3mA
I_G
I_D
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
700
ID
TOP
1.6A
600
2.3A
BOTTOM 3.6A
500
400
300
200
100
0
25
50
75
100
125
150
Starting T_J , Junction Temperature( ^°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
740
720
700
680
660
640
Fig^0.012d. Ty¹p^.0ical Dra²in^.0-to-Sour³c^.0e Voltag⁴e^.0
VIs_A._VA, vAavalalannccheeCCuurrrernetn(tA)
www.irf.com