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IRFBC30APBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET® Power MOSFET | |||
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IRFBC30APbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 âââ âââ
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ 0.67 âââ
RDS(on)
Static Drain-to-Source On-Resistance âââ âââ 2.2
VGS(th)
Gate Threshold Voltage
2.0 âââ 4.5
âââ âââ 25
IDSS
Drain-to-Source Leakage Current
âââ âââ 250
Gate-to-Source Forward Leakage
âââ âââ 100
IGSS
Gate-to-Source Reverse Leakage
âââ âââ -100
Dynamic @ TJ = 25°C (unless otherwise specified)
V
V/°C
â¦
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mAÂ
VGS = 10V, ID = 2.2A Â
VDS = VGS, ID = 250µA
VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
2.1 âââ âââ
âââ âââ 23
âââ âââ 5.4
âââ âââ 11
âââ 9.8 âââ
âââ 13 âââ
âââ 19 âââ
âââ 12 âââ
âââ 510 âââ
âââ 70 âââ
âââ 3.5 âââ
âââ 730 âââ
âââ 19 âââ
âââ 31 âââ
S VDS = 50V, ID = 2.2A
ID = 3.6A
nC VDS = 480V
VGS = 10V, See Fig. 6 and 13 Â
VDD = 300V
ns ID = 3.6A
RG = 12â¦
RD = 82â¦,See Fig. 10 Â
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 480V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 480V Â
Avalanche Characteristics
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
âââ
290
mJ
âââ
3.6
A
âââ
7.4
mJ
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
Diode Characteristics
âââ
0.50
âââ
1.7
âââ
°C/W
62
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
MOSFET symbol
D
âââ âââ 3.6
A
showing the
integral reverse
G
âââ âââ 14
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
âââ âââ 1.6 V TJ = 25°C, IS = 3.6A, VGS = 0V Â
âââ 400 600 ns TJ = 25°C, IF = 3.6A
âââ 1.1 1.7 µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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