IRFB9N30APBF Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET® Power MOSFET

IRFB9N30APbF
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
I_AS
0.01Ω
+
- ^VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V_(BR)DSS
tp
I_AS
Fig 12b. Unclamped Inductive Waveforms
Q_G
10 V
Q_GS
Q_GD
V_G
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
+
D.U.T. -V^DS
V_GS
3mA
I_G
I_D
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
400
ID
TOP
4.2A
5.9A
BOTTOM 9.3A
300
200
100
0
25
50
75
100
125
150
Starting T_J , Junction Temperature( ^°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
400
380
360
340
0
2
4
6
8
I _av , Avalanche Current (A)
A
10
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
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