IRFB9N30APBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET® Power MOSFET

IRFB9N30APbF
100000
10000
1000
100
10
V _GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
Coss
Crss
1
A
1
10
100
1000
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = 9.3A}
16
12
V_DS = 240V
V_DS = 150V
V_DS = 60V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150° C
1
T_J = 25° C
0.1
0.0
V_GS = 0 V
0.4
0.8
1.2
1.6
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
10
100us
1ms
1
10ms
T_C = 25°C
T_J = 150° C
Single Pulse
0.1
1
10
100
1000
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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