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IRFB5615PBF_15 Datasheet, PDF (6/7 Pages) International Rectifier – Key Parameters Optimized for Class-D Audio Amplifier Applications | |||
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IRFB5615PbF
+
Â
-
Â
RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Â
Circuit Layout Considerations
⢠Low Stray Inductance
⢠Ground Plane
-
⢠Low Leakage Inductance
Current Transformer
-Â +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
⢠dv/dt controlled by RG
⢠Driver same type as D.U.T.
⢠ISD controlled by Duty Factor "D"
⢠D.U.T. - Device Under Test
VDD
+
-
Re-Applied
Voltage
Body Diode
InIndduuccttoorrCCuurrreenntt
Forward Drop
Ripple ⤠5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
* VGS=10V
VDD
ISD
V(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01â¦
+
- VDD
A
Fig 17a. Unclamped Inductive Test Circuit
RD
VDS
VGS
RG
D.U.T.
+
-
V
DD
V1G0SV
Pulse Width ⤠1 µs
Duty Factor ⤠0.1 %
Fig 18a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
50Kâ¦
12V
.2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 19a. Gate Charge Test Circuit
6
IAS
Fig 17b. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 18b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 19b. Gate Charge Waveform
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