IRFB5615PBF_15 Datasheet, PDF (4/7 Pages) International Rectifier – Key Parameters Optimized for Class-D Audio Amplifier Applications

IRFB5615PbF
1000
100
TJ = 175°C
10
TJ = 25°C
VGS = 0V
1.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
1msec
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
6.0
5.5
5.0
4.5
4.0
3.5
ID = 100µA
3.0
ID = 250uA
2.5
ID = 1.0mA
ID = 1.0A
2.0
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
1
0.1
0.01
0.001
1E-006
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ_{J τJ}
τ_{1 τ1}
R_1R1
R_2R2
τ_{2 τ2}
R_3R3
τ_{3 τ3}
R_4R4
τ_Cτ
Ri (°C/W)
0.02324
0.26212
τ_{4 τ4}
0.50102
τi (sec)
0.000008
0.000106
0.001115
SINGLE PULSE
( THERMAL RESPONSE )
Ci= τi/Ri
Ci i/Ri
0.25880 0.005407
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
Fig 11. Maximum Effe^t1ct^,iv^Re^ecT^tarⁿa^gn^us^laie^{r P}n^ut ^lT^seh^De^urm^rata^iolⁿIm^(sp^ece⁾dance, Junction-to-Case
4
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