IRFB4310ZPBF Datasheet, PDF (6/11 Pages) International Rectifier – HEXFET Power MOSFET

IRFB/S/SL4310ZPbF
4.5
ID = 1.0A
4.0
ID = 1.0mA
ID = 250μA
3.5
ID = 150μA
3.0
2.5
2.0
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Threshold Voltage Vs. Temperature
24
20
16
12
8
IF = 45A
VR = 85V
4
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 18 - Typical Recovery Current vs. di_f/dt
600
24
20
16
12
8
IF = 30A
VR = 85V
4
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 17 - Typical Recovery Current vs. di_f/dt
600
500
400
300
200
IF = 30A
VR = 85V
100
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 19 - Typical Stored Charge vs. di_f/dt
500
400
300
200
IF = 45A
VR = 85V
100
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 20 - Typical Stored Charge vs. di_f/dt
6
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