IRFB4310ZPBF Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET Power MOSFET

PD - 97115A
IRFB4310ZPbF
IRFS4310ZPbF
IRFSL4310ZPbF
HEXFET^® Power MOSFET
Applications
D
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
S
D
DS
G
TO-220AB
IRFB4310ZPbF
V_DSS
R_DS(on)
typ.
max.
I_{D (Silicon Limited)}
I_{D (Package Limited)}
100V
4.8m:
6.0m:
127A c
75A
D
D
DS
G
D²Pak
IRFS4310ZPbF
DS
G
TO-262
IRFSL4310ZPbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery f
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)}
I_AR
E_AR
Single Pulse Avalanche Energy e
Avalanche Current c
Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
R_θJC
Junction-to-Case k
R_θCS
Case-to-Sink, Flat Greased Surface , TO-220
R_θJA
Junction-to-Ambient, TO-220 k
R_θJA
Junction-to-Ambient (PCB Mount) , D²Pak jk
www.irf.com
D
Drain
S
Source
Max.
127c
90c
75
560
250
1.7
± 20
18
-55 to + 175
300
10lbxin (1.1Nxm)
130
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
–––
Max.
0.6
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
4/27/07