IRFB3307ZGPBF Datasheet, PDF (6/8 Pages) International Rectifier – HEXFETPower MOSFET

IRFB3307ZGPbF
4.5
4.0
3.5
3.0
2.5
2.0 ^{ID = 150µA}
ID = 250µA
1.5 ID = 1.0mA
1.0 ^{ID = 1.0A}
0.5
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
20
IF = 72A
VR = 64V
15 ^{TJ = 25°C}
TJ = 125°C
10
5
20
IF = 48A
VR = 64V
15 ^{TJ = 25°C}
TJ = 125°C
10
5
0
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 17 - Typical Recovery Current vs. di_f/dt
420
IF = 48A
VR = 64V
340 _{TJ = 25°C}
TJ = 125°C
260
180
100
0
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 18 - Typical Recovery Current vs. di_f/dt
420
IF = 72A
VR = 64V
340 _{TJ = 25°C}
TJ = 125°C
260
20
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 19 - Typical Stored Charge vs. di_f/dt
180
100
20
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 20 - Typical Stored Charge vs. di_f/dt
6
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