IRFB3307ZGPBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFETPower MOSFET

IRFB3307ZGPbF
1000
100
TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
120
100
80
60
40
20
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0.0
20 30 40 50 60 70 80
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
100µsec
1msec
10
10msec
DC
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
Id = 5mA
95
90
85
80
75
70
65
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
600
ID
500
TOP 15A
26A
BOTTOM 75A
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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