IRF8788PBF Datasheet, PDF (6/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF8788PbF
7
1000
ID = 19A
ID
TOP
6.4A
6
800
7.4A
BOTTOM 19A
5
600
4
TJ = 125°C
400
3
TJ = 25°C
2
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
I_AS
0.01Ω
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V_DS
V_GS
R_G
V_GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R_D
D.U.T.
+_{-V D D}
Fig 15a. Switching Time Test Circuit
6
200
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V_(BR)DSS
tp
I_AS
Fig 14b. Unclamped Inductive Waveforms
V_DS
90%
10%
V_GS
t_d(on) t_r
t_d(off) t_f
Fig 15b. Switching Time Waveforms
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