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IRF8788PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF8788PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ÎÎVDSS/ÎTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
ÎVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
Rg
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
30
âââ
âââ
âââ
1.35
âââ
âââ
âââ
âââ
âââ
95
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
0.024
2.3
3.04
1.80
-6.59
âââ
âââ
âââ
âââ
âââ
44
12
4.7
14
13.3
18.7
22
0.54
23
24
23
11
5720
980
450
âââ
âââ
2.8
3.8
2.35
âââ
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
e mΩ VGS = 10V, ID = 24A
e VGS = 4.5V, ID = 19A
V VDS = VGS, ID = 100μA
mV/°C
1.0
150
100
-100
âââ
66
μA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 19A
âââ
VDS = 15V
âââ nC VGS = 4.5V
âââ
ID = 19A
âââ
See Figs. 17a & 17b
âââ
âââ
1.09
nC VDS = 16V, VGS = 0V
Ω
âââ
VDD = 15V, VGS = 4.5V
âââ ns ID = 19A
âââ
RG = 1.8Ω
âââ
See Fig. 15a & 15b
âââ
VGS = 0V
âââ pF VDS = 15V
âââ
Æ = 1.0MHz
Parameter
EAS
IAR
d Single Pulse Avalanche Energy
 Avalanche Current
Diode Characteristics
Typ.
âââ
âââ
Max.
230
19
Units
mJ
A
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 3.1
A MOSFET symbol
D
(Body Diode)
showing the
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
âââ âââ 190
âââ âââ 1.0
âââ âââ 0.75
integral reverse
G
A
p-n junction diode.
S
e V TJ = 25°C, IS = 19A, VGS = 0V
e V TJ = 25°C, IS = 2.2A, VGS = 0V
âââ 24 36 ns TJ = 25°C, IF = 19A, VDD = 15V
e âââ 33 50 nC di/dt = 230A/μs
ton
Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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