IRF8714PBF Datasheet, PDF (6/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF8714PbF
25
300
ID = 14A
ID
250
TOP 0.82A
1.0A
20
BOTTOM 11A
200
15
150
TJ = 125°C
100
10
TJ = 25°C
50
5
3 4 5 6 7 8 9 10 11 12
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V(BR)DSS
15V
tp
VDS
L
DRIVER
0
RG
20V
tp
D.U.T
IAS
0.01Ω
+
- ^VDD
A
I _AS
Fig 14. Unclamped Inductive Test Circuit
and Waveform
Id
Vgs
L
DUT
2¹0^KK
S
VCC
Fig 15. Gate Charge Test Circuit
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 16. Gate Charge Waveform
6
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