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| IRF8714PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF8714PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
30
âââ
âââ
âââ
1.35
âââ
âââ
âââ
0.021
7.1
10.9
1.80
-6.0
âââ
âââ
âââ
8.7
13
2.35
âââ
1.0
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
e m⦠VGS = 10V, ID = 14A
e VGS = 4.5V, ID = 11A
V VDS = VGS, ID = 25µA
mV/°C VDS = VGS, ID = 25µA
µA VDS = 24V, VGS = 0V
âââ âââ 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
71 âââ âââ
âââ 8.1 12
S VDS = 15V, ID = 11A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 1.9 âââ
VDS = 15V
âââ 1.0 âââ nC VGS = 4.5V
âââ 3.0 âââ
ID = 11A
âââ 2.2 âââ
See Figs. 15 & 16
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 4.0 âââ
Qoss
Output Charge
Rg
Gate Resistance
âââ 4.8 âââ nC VDS = 16V, VGS = 0V
âââ 1.6 2.6 â¦
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
âââ 10 âââ
VDD = 15V, VGS = 4.5V
âââ 9.9 âââ
ID = 11A
âââ 11 âââ ns RG = 1.8â¦
âââ 5.0 âââ
See Fig. 18
Ciss
Input Capacitance
âââ 1020 âââ
VGS = 0V
Coss
Output Capacitance
âââ 220 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 110 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
65
11
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
Conditions
âââ âââ 3.1
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
A showing the
âââ âââ 110
integral reverse
G
âââ âââ 1.0
e p-n junction diode.
S
V TJ = 25°C, IS = 11A, VGS = 0V
âââ 14
âââ 15
21
23
e ns TJ = 25°C, IF = 11A, VDD = 15V
nC di/dt = 300A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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