IRF840AS Datasheet, PDF (6/10 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)

IRF840AS/L
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
I_{A S}
0 .0 1Ω
+
- ^VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V _(BR)DSS
tp
I_AS
Fig 12b. Unclamped Inductive Waveforms
Q_G
10 V
Q_GS
Q_GD
V_G
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
-V^DS
V_GS
3mA
I_G
I_D
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
1200
1000
800
TOP
BOTTOM
ID
3.6A
5.1A
8.0A
600
400
200
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
600
610
600
580
590
580
560
570
560
540 ₅₅₀
540
0.0
1.0
2.0
3.0
4.0
5.0
6.0
520
0.0
1.0
2.0
IAV_3.,₀Aval₄a_.n₀che
Current ( A)
5.0 6.0
7.0
8.0
IAV , Avalanche Current ( A)
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
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